Adet bazlı fiyat
- 1+ adet$0.38
- 10+ adet$0.35
- 100+ adet$0.33
- 500+ adet$0.32
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Current Gain Hfe Min Ic Vce
- 63 @ 150mA 2V
- Yayın Yılı
- 2016
- Kılıf / Paket
- 3-PowerUDFN
- Power Max
- 420mW
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 3
- Parça Durumu
- Active
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
- Transistor Type
- PNP
- Terminal Formu
- NO LEAD
- Contact Plating
- Tin
- Polaritychannel Type
- PNP
- Pin Sayısı
- 3
- Montaj Tipi
- Surface Mount
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- 150°C TJ
- Fabrika Tedarik Süresi
- 8 Weeks
- Transistor Element Material
- SILICON
- Emitter Base Voltage Vebo
- 5V
- Pin Sayısı
- 3
- Max Breakdown Voltage
- 60V
- Current Collector Cutoff Max
- 100nA ICBO
- Case Connection
- COLLECTOR
- Number Of Elements
- 1
- Terminal Pozisyonu
- DUAL
- Collector Base Voltage Vcbo
- 60V
- Frekans
- 145MHz
- Montaj
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transition Frequency
- 145MHz
- Temel Parça No
- BC52PA
- Collectoremitter Breakdown Voltage
- 60V
- Configuration
- SINGLE
- Ambalaj
- Tape & Reel (TR)
- Max Collector Current
- 1A
- Power Dissipation
- 1.65W
- Max Power Dissipation
- 420mW
- Collector Emitter Voltage Vceo
- 60V
- JESD-609 Kodu
- e3
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