BAS116GWJ

Teknik Özellikler

Speed

Standard Recovery >500ns, > 200mA (Io)

Power Dissipation Max

0.357W

Rep Pk Reverse Voltagemax

85V

Capacitance Vr F

2pF @ 0V 1MHz

Fabrika Tedarik Süresi

4 Weeks

Current Reverse Leakage Vr

5nA @ 75V

Reverse Test Voltage

75V

Jesd30 Code

R-PDSO-G2

Number Of Phases

1

Yüzey Montaj

YES

Voltage Forward Vf Max If

1.25V @ 150mA

Configuration

SINGLE

Terminal Formu

GULL WING

Yayın Yılı

2016

Operating Temperature Junction

150°C Max

Terminal Kaplaması

Tin (Sn)

Tepe Reflow Süresi (maks. sn)

30

Current Average Rectified Io

215mA DC

Number Of Elements

1

Nonrep Pk Forward Currentmax

1A

Terminal Sayısı

2

Terminal Pozisyonu

DUAL

Tepe Reflow Sıcaklığı (°C)

260

Diode Type

Standard

Reverse Currentmax

0.005μA

RoHS Durumu

ROHS3 Compliant

Diode Element Material

SILICON

Output Currentmax

0.215A

Breakdown Voltagemin

75V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Reverse Recovery Time

3μs

Voltage Dc Reverse Vr Max

75V

Kılıf / Paket

SOD-123

Ambalaj

Tape & Reel (TR)

Operating Temperature Max

150°C

Reference Standard

AEC-Q101; IEC-60134

Seri

Automotive, AEC-Q101

JESD-609 Kodu

e3

Parça Durumu

Active