2N7002PV,115

Teknik Özellikler

Kılıf / Paket

SOT-563, SOT-666

Power Dissipation

390mW

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Pin Sayısı

6

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

0.8nC @ 4.5V

Terminal Formu

FLAT

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

3 ns

Ambalaj

Tape & Reel (TR)

Rise Time

4ns

Transistor Application

SWITCHING

Fet Type

2 N-Channel (Dual)

Number Of Elements

2

Yayın Yılı

2010

Contact Plating

Tin

Input Capacitance Ciss Max Vds

50pF @ 10V

Radyasyon Dayanımı

No

Pin Sayısı

6

Max Dual Supply Voltage

60V

Continuous Drain Current Id

350mA

Fall Time Typ

5 ns

Transistor Element Material

SILICON

Max Power Dissipation

330mW

Additional Feature

LOGIC LEVEL COMPATIBLE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kurşunsuz

Lead Free

Drain Currentmax Abs Id

0.35A

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

10 ns

Rds On Max Id Vgs

1.6 Ω @ 500mA, 10V

JESD-609 Kodu

e3

Çalışma Sıcaklığı

150°C TJ

Fet Feature

Logic Level Gate

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

Power Max

330mW

Terminal Sayısı

6