1N4531,133

Teknik Özellikler

Max Power Dissipation

500mW

Capacitance Vr F

4pF @ 0V 1MHz

Kurşunsuz

Lead Free

Current Average Rectified Io

200mA DC

Peak Reverse Current

100nA

Max Reverse Voltage Dc

75V

Forward Voltage

1V

Average Rectified Current

200mA

Temel Parça No

1N4531

Operating Temperature Junction

200°C Max

Yayın Yılı

2007

Voltage Forward Vf Max If

1V @ 10mA

Reverse Recovery Time

4 ns

Max Repetitive Reverse Voltage Vrrm

75V

Element Configuration

Single

Forward Current

200mA

Max Surge Current

450mA

Diode Type

Standard

Current Reverse Leakage Vr

25nA @ 20V

Recovery Time

4 ns

Parça Durumu

Active

Peak Nonrepetitive Surge Current

4A

Pin Sayısı

2

Montaj Tipi

Through Hole

Case Connection

ISOLATED

Min. Çalışma Sıcaklığı

-65°C

Contact Plating

Tin

RoHS Durumu

ROHS3 Compliant

Speed

Small Signal =< 200mA (Io), Any Speed

Montaj

Through Hole

Kılıf / Paket

DO-204AG, DO-34, Axial

Terminal Formu

WIRE

Pin Sayısı

2

Terminal Sayısı

2

Maks. Çalışma Sıcaklığı

200°C

Ambalaj

Tape & Box (TB)

Number Of Elements

1

Fabrika Tedarik Süresi

6 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Diode Element Material

SILICON