PSMN1R8-40YLC

Teknik Özellikler

Reference Standard

IEC-60134

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

REACH Uyumluluk Kodu

not_compliant

Jedec95 Code

MO-235

Tepe Reflow Sıcaklığı (°C)

260

Operating Mode

ENHANCEMENT MODE

Rohs Code

Yes

Drainsource On Resistancemax

0.0021 Ω

Part Life Cycle Code

Active

Ds Breakdown Voltagemin

40 V

Polaritychannel Type

N-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating Eas

248 mJ

Additional Feature

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Ihs Manufacturer

NEXPERIA

JESD-609 Kodu

e3

Number Of Terminals

4

Package Shape

RECTANGULAR

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Id

100 A

Terminal Kaplaması

TIN

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Exterior Housing Material

1

Pulsed Drain Currentmax Idm

1128 A

Tepe Reflow Süresi (maks. sn)

30

Package Style

SMALL OUTLINE

Package Description

SMALL OUTLINE, R-PSSO-G4

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Yüzey Montaj

YES

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G4

Saturation Current

1