PSMN0R7-25YLD

Teknik Özellikler

Ihs Manufacturer

NEXPERIA

Shrinkage Temperature

+60…+130 (min)/ melting solder +138 °C

Additional Feature

HIGH RELIABILITY

Avalanche Energy Rating Eas

174 mJ

Date Of Intro

2017-02-27

Depth

L - 42 mm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Polaritychannel Type

N-CHANNEL

Operating Temperature Range

-55…+105 °C

Ds Breakdown Voltagemin

25 V

Part Life Cycle Code

Active

Drainsource On Resistancemax

0.00092 Ω

Tip

heat-shrinkable connector bushing type SST

Rohs Code

Yes

Degree Of Protection

IP67

Operating Mode

ENHANCEMENT MODE

Wire Crosssection

(8-4 AWG) 8.0…22.0 mm2

Tepe Reflow Sıcaklığı (°C)

260

REACH Uyumluluk Kodu

not_compliant

Conductor Diameter

B - Ф6.8 / (CB) - Ф13 (see Fig.) mm

Çap

inner tube (A) - 13 (min) mm

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Reference Standard

IEC-60134

Saturation Current

1

Jesd30 Code

R-PSSO-G4

Dielectric Strength

600…1000 (50 Hz, 1 min.) V

Gross Weight

2.50

Yüzey Montaj

YES

Case Connection

DRAIN

Transistor Application

SWITCHING

Package Body Material

PLASTIC/EPOXY

Package Description

SMALL OUTLINE, R-PSSO-G4

Pulsed Drain Currentmax Idm

1482 A

Tepe Reflow Süresi (maks. sn)

30

Package Style

SMALL OUTLINE

Exterior Housing Material

1

Material

HOT (polyolefin) + low-temperature solder

Terminal Formu

GULL WING

ECCN Kodu

EAR99