PHKD3NQ10T

Teknik Özellikler

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Date Of Intro

2017-02-01

Transistor Element Material

SILICON

Yüzey Montaj

YES

Terminal Formu

GULL WING

Ds Breakdown Voltagemin

100 V

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Id

3 A

Operating Temperaturemax

150 °C

Number Of Terminals

8

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

0.09 Ω

Exterior Housing Material

2

Power Dissipationmax Abs

2 W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Style

SMALL OUTLINE

Jesd30 Code

R-PDSO-G8

Kurşunsuz Kodu

Yes

Package Body Material

PLASTIC/EPOXY

Ihs Manufacturer

NEXPERIA

Package Description

SMALL OUTLINE, R-PDSO-G8

ECCN Kodu

EAR99

Terminal Kaplaması

NICKEL PALLADIUM GOLD

Rohs Code

Yes

Pulsed Drain Currentmax Idm

12 A

Package Shape

RECTANGULAR

Saturation Current

2

Tepe Reflow Sıcaklığı (°C)

260

Part Life Cycle Code

Obsolete

Transistor Application

SWITCHING

JESD-609 Kodu

e4

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

30