BUK9Y2R8-40H

Teknik Özellikler

Part Life Cycle Code

Active

Package Description

,

Case Connection

DRAIN

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G4

Package Shape

RECTANGULAR

Operating Temperaturemin

-55 °C

Jedec95 Code

MO-235

Operating Temperaturemax

175 °C

Tepe Reflow Süresi (maks. sn)

30

JESD-609 Kodu

e3

Date Of Intro

2018-05-31

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating Eas

50 mJ

Power Dissipationmax Abs

172 W

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

N-CHANNEL

Reference Standard

AEC-Q101; IEC-60134

Rohs Code

Yes

Pulsed Drain Currentmax Idm

600 A

Saturation Current

1

Drainsource On Resistancemax

0.0039 Ω

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Yüzey Montaj

YES

Ds Breakdown Voltagemin

40 V

Exterior Housing Material

1

Ihs Manufacturer

NEXPERIA

Drain Currentmax Id

120 A

ECCN Kodu

EAR99

Number Of Terminals

4

Feedback Capmax Crss

246 pF

Package Style

SMALL OUTLINE

Terminal Pozisyonu

SINGLE

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

TIN

REACH Uyumluluk Kodu

not_compliant

Package Body Material

PLASTIC/EPOXY