BSH105

Teknik Özellikler

Additional Feature

LOGIC LEVEL COMPATIBLE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ihs Manufacturer

NEXPERIA

Part Life Cycle Code

Not Recommended

Drainsource On Resistancemax

0.25 Ω

Polaritychannel Type

N-CHANNEL

Ds Breakdown Voltagemin

20 V

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Sıcaklığı (°C)

260

Rohs Code

Yes

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

Reference Standard

IEC-134

REACH Uyumluluk Kodu

compliant

Jesd30 Code

R-PDSO-G3

Yüzey Montaj

YES

Saturation Current

1

Tepe Reflow Süresi (maks. sn)

30

Package Style

SMALL OUTLINE

Exterior Housing Material

1

Transistor Application

SWITCHING

Package Body Material

PLASTIC/EPOXY

Drain Currentmax Id

1.05 A

Configuration

SINGLE WITH BUILT-IN DIODE

Package Shape

RECTANGULAR

Terminal Formu

GULL WING

Terminal Kaplaması

TIN

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Number Of Terminals

3