IRF250

Teknik Özellikler

Package Description

HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Operating Temperaturemin

-55 °C

Drain Currentmax Abs Id

30 A

Terminal Formu

PIN/PEG

Ihs Manufacturer

NEW JERSEY SEMICONDUCTOR PRODUCTS INC

Jesd30 Code

O-MBFM-P2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Üretici Parça No

IRF250

Risk Rank

5.1

Drain Currentmax Id

30 A

Yüzey Montaj

NO

Transistor Application

SWITCHING

Number Of Terminals

2

ECCN Kodu

EAR99

Rohs Code

No

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Case Connection

DRAIN

Reflow Temperaturemax S

NOT SPECIFIED

Package Shape

ROUND

Part Life Cycle Code

Active

JESD-609 Kodu

e0

Terminal Pozisyonu

BOTTOM

Avalanche Energy Rating Eas

500 mJ

Exterior Housing Material

1

Drainsource On Resistancemax

0.09 Ω

Package Body Material

METAL

Terminal Kaplaması

Tin/Lead (Sn/Pb)

REACH Uyumluluk Kodu

unknown

Jedec95 Code

TO-204AE

Configuration

SINGLE

Pulsed Drain Currentmax Idm

120 A

Polaritychannel Type

N-CHANNEL

Number Of Elements

1

Transistor Element Material

SILICON

Power Dissipationmax Abs

150 W

Package Style

FLANGE MOUNT

Operating Temperaturemax

150 °C

Ds Breakdown Voltagemin

200 V