NE3210S01-T1B

Teknik Özellikler

Frekans

12GHz

Configuration

SINGLE

Pin Sayısı

1

Polaritychannel Type

N-CHANNEL

Min. Çalışma Sıcaklığı

-65°C

Qualification Status

Not Qualified

Drain To Source Breakdown Voltage

4V

Ambalaj

Tape & Reel (TR)

Gate To Source Voltage Vgs

-3V

Drain Currentmax Id

0.015 A

Operating Mode

DEPLETION MODE

Leakage Current

5 mA

Kurşunsuz

Lead Free

Terminal Sayısı

4

Switching Time

8.3 ms max

Drain To Source Voltage Vdss

4V

Montaj

Surface Mount

HTS Kodu

8541.21.00.95

Current Test

10mA

Highest Frequency Band

KU BAND

Insulation Resistance

100 (at Uis.d.c=500V) MΩ min

RoHS Durumu

RoHS Compliant

Pin Sayısı

4

Package Style

MICROWAVE

Transistor Type

HFET

Fet Technology

HETERO-JUNCTION

Genişlik

45 mm

Load Current

10 A

Package Body Material

PLASTIC/EPOXY

Power Dissipation

165mW

Kurşunsuz Kodu

Yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Voltage Test

2V

Continuous Drain Current Id

70mA

Terminal Kaplaması

TIN LEAD

ECCN Kodu

EAR99

JESD-609 Kodu

e0

Transistor Application

AMPLIFIER

Part Life Cycle Code

Transferred

Tip

Single-phase SSR solid state relay series