NDS352AP

Teknik Özellikler

Direnç

500mOhm

Drain To Source Breakdown Voltage

-30V

Akım Değeri

-900mA

Yayın Yılı

1997

Fall Time Typ

16 ns

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current Id

900mA

HTS Kodu

8541.21.00.95

Power Dissipation

500mW

Rise Time

16ns

Ihs Manufacturer

NATIONAL SEMICONDUCTOR CORP

Drain Currentmax Id

0.9 A

Additional Feature

LOGIC LEVEL COMPATIBLE

Nominal Vgs

-1.7 V

Number Of Elements

1

Montaj Tipi

Surface Mount

Turn Off Delay Time

35 ns

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

135pF @ 15V

Pin Sayısı

3

Jesd30 Code

R-PDSO-G3

Part Life Cycle Code

Transferred

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Terminal Pozisyonu

DUAL

Genişlik

3.05mm

Power Dissipationmax Abs

0.5 W

Dual Supply Voltage

-30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Exterior Housing Material

1

Contact Plating

Tin

JESD-609 Kodu

e0

Jedec95 Code

TO-236AB

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

ECCN Kodu

EAR99

Fet Type

P-Channel

Threshold Voltage

-800mV

Drainsource On Resistancemax

0.3 Ω

Yüzey Montaj

YES