JANTXV2N6987

Teknik Özellikler

Üretici Parça No

JANTXV2N6987

Contact Plating

Lead, Tin

Number Of Elements

4

Collector Base Voltage Vcbo

60V

Collectoremitter Breakdown Voltage

60V

Part Package Code

DIP

Operating Temperaturemax

200 °C

Çalışma Sıcaklığı

-65°C~200°C TJ

Terminal Formu

THROUGH-HOLE

Transistor Element Material

SILICON

Voltage Collector Emitter Breakdown Max

60V

Reference Standard

MIL-19500/558D

HTS Kodu

8541.29.00.95

Package Body Material

UNSPECIFIED

Dc Current Gainmin Hfe

50

Part Life Cycle Code

Active

Currentcollector Ic Max

600mA

Terminal Pozisyonu

DUAL

REACH Uyumluluk Kodu

compliant

Number Of Terminals

14

Kılıf / Paket

14-DIP (0.300, 7.62mm)

Ihs Manufacturer

MICROSEMI CORP

Transistor Application

SWITCHING

Polaritychannel Type

PNP

Maks. Çalışma Sıcaklığı

200 °C

Power Max

1.5W

Transistor Type

4 PNP (Quad)

Risk Rank

5.2

Seri

Military, MIL-PRF-19500/558

Collector Emitter Voltage Vceo

1.6V

Ambalaj

Bulk

JESD-609 Kodu

e0

Kurşunsuz Kodu

no

Lifecycle Status

Production (Last Updated: 1 month ago)

Min. Çalışma Sıcaklığı

-65 °C

RoHS Durumu

Non-RoHS Compliant

Max Collector Current

600mA

Max Power Dissipation

1.5W

Yüzey Montaj

NO

Montaj Tipi

Through Hole