APTMC120TAM33CTPAG

Teknik Özellikler

RoHS Durumu

RoHS Compliant

Lead Spacing

1.252 (31.80mm)

Montaj Tipi

Chassis Mount

Nominal Gerilim

50 V

Terminal Pozisyonu

UPPER

Jesd30 Code

R-XUFM-X23

Tedarikçi Cihaz Paketi

SP6-P

Power Dissipation

370

Seri

U32D

Configuration

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Vgsth Max Id

2.2V @ 3mA (Typ)

Terminal Formu

UNSPECIFIED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kılıf / Paket

SP6

Lifecycle Status

IN PRODUCTION (Last Updated: 1 month ago)

Ambalaj

Bulk

Paket

Bulk

Transistor Application

SWITCHING

Technology

Silicon Carbide (SiC)

Yayın Yılı

1997

Parça Durumu

Active

Ürün Durumu

Active

Channel Type

Dual N

Maks. Oturma Yüksekliği

5.118 (130.00mm)

Fet Type

6 N-Channel (3-Phase Bridge)

Montaj

Chassis Mount

Rds On Max Id Vgs

33m Ω @ 60A, 20V

Pulsed Drain Currentmax Idm

155A

Ds Breakdown Voltagemin

1200V

Applications

General Purpose

Kapasitans

33 mF

Terminal Sayısı

23

Polarization

Polar

Boyut / Ölçü

3.000 Dia (76.20mm)

Number Of Elements

6

Case Connection

ISOLATED

Fet Feature

Silicon Carbide (SiC)

Çalışma Sıcaklığı

-40°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifetime Temp

2000 Hrs @ 105°C