APTM50H15FT1G

Teknik Özellikler

Drain To Source Voltage Vdss

500V

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

SP1

Gate To Source Voltage Vgs

30V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time

29 ns

Terminal Formu

UNSPECIFIED

Rise Time

35ns

Gate Charge Qg Max Vgs

170nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-40°C~150°C TJ

Input Capacitance Ciss Max Vds

5448pF @ 25V

Transistor Application

SWITCHING

Pin Sayısı

12

Additional Feature

AVALANCHE RATED

Parça Durumu

Active

Fabrika Tedarik Süresi

36 Weeks

Yayın Yılı

2007

Max Power Dissipation

208W

Pin Sayısı

1

Turn Off Delay Time

80 ns

Continuous Drain Current Id

25A

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Ambalaj

Bulk

Fall Time Typ

26 ns

Rds On Max Id Vgs

180m Ω @ 21A, 10V

Montaj Tipi

Chassis Mount

Ds Breakdown Voltagemin

500V

Terminal Pozisyonu

UPPER

Fet Type

4 N-Channel (H-Bridge)

RoHS Durumu

RoHS Compliant

Montaj

Chassis Mount, Screw

Number Of Elements

4

Case Connection

ISOLATED

Fet Feature

Standard

Configuration

COMPLEX

Terminal Sayısı

12

Vgsth Max Id

5V @ 1mA