APTM50AM38STG

Teknik Özellikler

Drain To Source Voltage Vdss

500V

Kılıf / Paket

SP4

Gate To Source Voltage Vgs

30V

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Terminal Formu

UNSPECIFIED

Turn On Delay Time

18 ns

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

11200pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-40°C~150°C TJ

JESD-609 Kodu

e1

Gate Charge Qg Max Vgs

246nC @ 10V

Rise Time

35ns

Pin Sayısı

10

Additional Feature

AVALANCHE ENERGY RATED

Transistor Application

SWITCHING

Parça Durumu

Active

Fabrika Tedarik Süresi

16 Weeks

Pin Sayısı

4

Max Power Dissipation

694W

Ambalaj

Bulk

ECCN Kodu

EAR99

Turn Off Delay Time

87 ns

Continuous Drain Current Id

90A

Radyasyon Dayanımı

No

Montaj Tipi

Chassis Mount

Rds On Max Id Vgs

45m Ω @ 45A, 10V

Fall Time Typ

77 ns

Pulsed Drain Currentmax Idm

360A

Terminal Pozisyonu

UPPER

Ds Breakdown Voltagemin

500V

Jesd30 Code

R-XUFM-X10

RoHS Durumu

RoHS Compliant

Fet Type

2 N-Channel (Half Bridge)

Montaj

Chassis Mount, Screw

Number Of Elements

2

Case Connection

ISOLATED

Terminal Kaplaması

TIN SILVER COPPER

Fet Feature

Standard