APTM120H29FG

Teknik Özellikler

Fet Feature

Standard

Number Of Elements

4

Case Connection

ISOLATED

Terminal Kaplaması

TIN SILVER COPPER

Terminal Sayısı

12

Ds Breakdown Voltagemin

1200V

Rds On Max Id Vgs

348m Ω @ 17A, 10V

RoHS

Details

Montaj

Chassis Mount, Screw

Fet Type

4 N-Channel (H-Bridge)

Fabrika Tedarik Süresi

36 Weeks

Ürün Tipi

Discrete Semiconductor Modules

Continuous Drain Current Id

34A

Turn Off Delay Time

160 ns

ECCN Kodu

EAR99

Current Continuous Drain Id25

34A

Pin Sayısı

6

Power Max

780W

Max Power Dissipation

780W

Fabrika Paket Adedi

1

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

30V

Drain To Source Voltage Vdss

1200V 1.2kV

Temel Ürün No

APTM120

Gate Charge Qg Max Vgs

374nC @ 10V

Rise Time

15ns

Input Capacitance Ciss Max Vds

10300pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-40°C~150°C TJ

JESD-609 Kodu

e1

Turn On Delay Time

20 ns

Kurşunsuz Kodu

yes

Vgsth Max Id

5V @ 5mA

Configuration

4 N-Channel (Half Bridge)

Seri

POWER MOS 7®

Power Dissipation

780W

Tedarikçi Cihaz Paketi

SP6

Jesd30 Code

R-XUFM-X12

Terminal Pozisyonu

UPPER

Fall Time Typ

45 ns