APTM10AM02FG

Teknik Özellikler

Input Capacitance Ciss Max Vds

40000pF @ 25V

JESD-609 Kodu

e1

Çalışma Sıcaklığı

-40°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

1360nC @ 10V

Rise Time

240ns

Terminal Formu

UNSPECIFIED

Turn On Delay Time

160 ns

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kılıf / Paket

SP6

Gate To Source Voltage Vgs

30V

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

100V

Ambalaj

Bulk

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Continuous Drain Current Id

495A

Turn Off Delay Time

500 ns

Pin Sayısı

6

Power Max

1250W

Max Power Dissipation

1.25kW

Yayın Yılı

2012

Fabrika Tedarik Süresi

16 Weeks

Parça Durumu

Active

Additional Feature

AVALANCHE RATED

Pin Sayısı

7

Transistor Application

SWITCHING

Montaj

Chassis Mount, Screw

Avalanche Energy Rating Eas

3000 mJ

RoHS Durumu

RoHS Compliant

Fet Type

2 N-Channel (Half Bridge)

Pulsed Drain Currentmax Idm

1900A

Terminal Pozisyonu

UPPER

Ds Breakdown Voltagemin

100V

Jesd30 Code

R-XUFM-X7

Montaj Tipi

Chassis Mount

Rds On Max Id Vgs

2.5m Ω @ 200A, 10V

Fall Time Typ

160 ns

Power Dissipation

1.25kW