APTGT200DA60TG

Teknik Özellikler

Parça Durumu

Discontinued

JESD-609 Kodu

e1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

UNSPECIFIED

Çalışma Sıcaklığı

-40°C~175°C TJ

Transistor Element Material

SILICON

Configuration

Single

Vceon Max Vge Ic

1.9V @ 15V, 200A

Montaj

Chassis Mount

Power Max

625W

Gateemitter Voltagemax

20V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Additional Feature

AVALANCHE RATED

Number Of Elements

1

Turn Off Timenom Toff

370 ns

Transistor Application

POWER CONTROL

Jesd30 Code

R-XUFM-X12

Terminal Sayısı

12

Input Capacitance

12.3nF

Ntc Thermistor

Yes

Collector Emitter Voltage Vceo

1.9V

Qualification Status

Not Qualified

RoHS

Compliant

Kılıf / Paket

SP4

Pin Sayısı

4

Max Collector Current

290A

Turn On Time

180 ns

Input

Standard

Element Configuration

Single

Kurşunsuz Kodu

yes

Igbt Type

Trench Field Stop

Collectoremitter Breakdown Voltage

600V

Input Capacitance Cies Vce

12.3nF @ 25V

Terminal Kaplaması

TIN SILVER COPPER

Case Connection

ISOLATED

Current Collector Cutoff Max

250μA

Max Power Dissipation

625W

Terminal Pozisyonu

UPPER

Polaritychannel Type

N-CHANNEL