APTGF50DH120T3G

Teknik Özellikler

Min. Çalışma Sıcaklığı

-40°C

Configuration

Asymmetrical Bridge

Gateemitter Voltagemax

20V

Power Max

312 W

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Terminal Sayısı

11

Jesd30 Code

R-XUFM-X11

Input Capacitance

3.45nF

Voltage Collector Emitter Breakdown Max

1200V

Fabrika Paket Adedi

50

Continuous Collector Current At25 C

70 A

Minimum Operating Temperature

- 40 C

Turn Off Timenom Toff

400 ns

Collector Emitter Voltage Vceo Max

1200 V

Gateemitter Leakage Current

100 nA

Input Capacitance Cies Vce

3.45nF @ 25V

Currentcollector Ic Max

70 A

Input

Standard

Max Collector Current

70A

Kılıf / Paket

SP3

Vcesatmax

3.7 V

Ürün Durumu

Obsolete

Terminal Pozisyonu

UPPER

Pd Power Dissipation

312 W

Montaj

Chassis Mount, Screw

Vceon Max Vge Ic

3.7V @ 15V, 50A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

UNSPECIFIED

Collectoremitter Saturation Voltage

3.2 V

Paket

Bulk

Parça Durumu

Obsolete

Qualification Status

Not Qualified

Collector Emitter Voltage Vceo

1.2kV

Ntc Thermistor

Yes

Transistor Application

POWER CONTROL

Number Of Elements

2

Montaj Stili

SMD/SMT

Collectoremitter Breakdown Voltage

1.2kV