APTC60HM35T3G

Teknik Özellikler

Terminal Formu

UNSPECIFIED

Fabrika Paket Adedi

1

Pin Sayısı

3

Vgs Gatesource Voltage

- 30 V, + 30 V

Current Continuous Drain Id25

72A

Çalışma Sıcaklığı

-40°C~150°C TJ

Ürün Durumu

Active

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

283 ns

Fet Type

4 N-Channel (H-Bridge)

Jesd30 Code

R-XUFM-X25

Uzunluk

73.4mm

Power Max

416W

Paket

Bulk

Vds Drainsource Breakdown Voltage

600 V

Radyasyon Dayanımı

No

Minimum Operating Temperature

- 40 C

Element Configuration

Single

Ürün Tipi

Discrete Semiconductor Modules

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Bulk

Tedarikçi Cihaz Paketi

SP3

Transistor Polarity

N-Channel

Kurşunsuz Kodu

yes

Drain To Source Voltage Vdss

600V

Case Connection

ISOLATED

Vgs Th Gatesource Threshold Voltage

2.1 V

Turn On Delay Time

21 ns

Continuous Drain Current Id

72A

Number Of Elements

4

Fall Time Typ

84 ns

Terminal Pozisyonu

UPPER

Tip

Half Bridge Module

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Feature

Standard

Additional Feature

AVALANCHE RATED

Yükseklik

11.5mm

Montaj Tipi

Chassis Mount

Transistor Application

SWITCHING

Id Continuous Drain Current

72 A