APT80GA90B

Teknik Özellikler

Birim Ağırlık

1.340411 oz

Additional Feature

LOW CONDUCTION LOSS

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Gate Emitter Voltage

- 30 V, + 30 V

Current Collector Pulsed Icm

239A

Number Of Elements

1

Continuous Collector Current At25 C

145 A

Case Connection

COLLECTOR

Tedarikçi Cihaz Paketi

TO-247 [B]

Ambalaj

Tube

Gateemitter Voltagemax

30V

Vceon Max Vge Ic

3.1V @ 15V, 47A

Collector Emitter Voltage Vceo

900V

Collectoremitter Saturation Voltage

2.5

Element Configuration

Single

Minimum Operating Temperature

- 55 C

Ürün Tipi

IGBT Transistors

Seri

*

Gateemitter Thr Voltagemax

6V

Paket

Bulk

Radyasyon Dayanımı

No

Ürün Durumu

Active

Power Max

625W

Currentcollector Ic Max

145 A

Jesd30 Code

R-PSFM-T3

Çalışma Sıcaklığı

-55°C~150°C TJ

Polaritychannel Type

N-CHANNEL

Fabrika Paket Adedi

1

Continuous Collector Current

145

Turn Off Timenom Toff

320 ns

Switching Energy

1652μJ (on), 1389μJ (off)

Igbt Type

PT

Montaj

Through Hole

Test Conditions

600V, 47A, 4.7 Ω, 15V

Pin Sayısı

3

Td Onoff25c

18ns/149ns

Technology

Si

Max Power Dissipation

625W

Power Dissipation

625

Max Collector Current

145A