UMH2N-TP

Teknik Özellikler

Transistor Type

2 NPN - Pre-Biased (Dual)

Currentcollector Ic Max

100mA

Temel Parça No

UMH2N

Dc Current Gain Hfe Min Ic Vce

68 @ 5mA 5V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Terminal Kaplaması

Matte Tin (Sn)

Kurşunsuz Kodu

yes

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

6

Transistor Element Material

SILICON

Power Max

150mW

Yayın Yılı

2008

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Ambalaj

Cut Tape (CT)

Resistor Emitter Base R2

47k Ω

Yüzey Montaj

YES

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Frequency Transition

250MHz

Parça Durumu

Active

Jesd30 Code

R-PDSO-G6

Fabrika Tedarik Süresi

12 Weeks

Current Collector Cutoff Max

500nA

Transition Frequency

250MHz

Tepe Reflow Süresi (maks. sn)

10

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Pin Sayısı

6

Additional Feature

BUILT IN BIAS RESISTOR

Terminal Formu

GULL WING

Resistor Base R1

47k Ω

Number Of Elements

2

Operating Temperature Max

150°C

Power Dissipationmax Abs

0.15W

Polaritychannel Type

NPN

Qualification Status

Not Qualified

Voltage Collector Emitter Breakdown Max

50V

JESD-609 Kodu

e3