UMH1N-TP

Teknik Özellikler

Resistor Base R1

22k Ω

Terminal Formu

GULL WING

Power Dissipationmax Abs

0.15W

Polaritychannel Type

NPN

Operating Temperature Max

150°C

Number Of Elements

2

Voltage Collector Emitter Breakdown Max

50V

Qualification Status

Not Qualified

JESD-609 Kodu

e3

Frequency Transition

250MHz

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Tepe Reflow Süresi (maks. sn)

10

Transition Frequency

250MHz

Current Collector Cutoff Max

500nA

Fabrika Tedarik Süresi

12 Weeks

Jesd30 Code

R-PDSO-G6

Parça Durumu

Active

Pin Sayısı

6

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

ECCN Kodu

EAR99

Resistor Emitter Base R2

22k Ω

Ambalaj

Cut Tape (CT)

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant

Temel Parça No

UMH1N

Currentcollector Ic Max

100mA

Transistor Type

2 NPN - Pre-Biased (Dual)

Transistor Application

SWITCHING

Kurşunsuz Kodu

yes

Terminal Kaplaması

Matte Tin (Sn)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

56 @ 5mA 5V

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

260

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2005

Power Max

150mW

Transistor Element Material

SILICON