MIW50N65F-BP

Teknik Özellikler

Minimum Operating Temperature

- 40 C

Montaj Stili

Through Hole

Switching Energy

1.27mJ (on), 650μJ (off)

Igbt Type

Trench Field Stop

Continuous Collector Current At25 C

50 A

Test Conditions

300V, 50A, 10Ohm, 15V

Voltage Collector Emitter Breakdown Max

650 V

Collector Emitter Voltage Vceo Max

650 V

Vceon Max Vge Ic

1.95V @ 15V, 50A

Gate Charge

450 nC

Technology

Si

Power Max

326 W

Ürün Tipi

IGBT Transistors

Tedarikçi Cihaz Paketi

TO-247AB

Currentcollector Ic Max

85 A

Montaj Tipi

Through Hole

Continuous Collector Current

50 A

Configuration

Single

RoHS

Details

Current Collector Pulsed Icm

200 A

Pd Power Dissipation

326 W

Kılıf / Paket

TO-247-3

Giriş Tipi

Standard

Maximum Gate Emitter Voltage

- 30 V, + 30 V

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Collectoremitter Saturation Voltage

2.05 V

Paket

Tube

Td Onoff25c

55ns/319ns

Temel Ürün No

MIW50N65

Maks. Çalışma Sıcaklığı

+ 175 C

Ürün Durumu

Active

Ambalaj

Bulk

Fabrika Paket Adedi

1800