Adet bazlı fiyat
- 1+ adet$3.22
- 10+ adet$3.04
- 100+ adet$2.87
- 500+ adet$2.71
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Minimum Operating Temperature
- - 40 C
- Montaj Stili
- Through Hole
- Switching Energy
- 1.27mJ (on), 650μJ (off)
- Igbt Type
- Trench Field Stop
- Continuous Collector Current At25 C
- 50 A
- Test Conditions
- 300V, 50A, 10Ohm, 15V
- Voltage Collector Emitter Breakdown Max
- 650 V
- Collector Emitter Voltage Vceo Max
- 650 V
- Vceon Max Vge Ic
- 1.95V @ 15V, 50A
- Gate Charge
- 450 nC
- Technology
- Si
- Power Max
- 326 W
- Ürün Tipi
- IGBT Transistors
- Tedarikçi Cihaz Paketi
- TO-247AB
- Currentcollector Ic Max
- 85 A
- Montaj Tipi
- Through Hole
- Continuous Collector Current
- 50 A
- Configuration
- Single
- RoHS
- Details
- Current Collector Pulsed Icm
- 200 A
- Pd Power Dissipation
- 326 W
- Kılıf / Paket
- TO-247-3
- Giriş Tipi
- Standard
- Maximum Gate Emitter Voltage
- - 30 V, + 30 V
- Çalışma Sıcaklığı
- -40°C ~ 175°C (TJ)
- Collectoremitter Saturation Voltage
- 2.05 V
- Paket
- Tube
- Td Onoff25c
- 55ns/319ns
- Temel Ürün No
- MIW50N65
- Maks. Çalışma Sıcaklığı
- + 175 C
- Ürün Durumu
- Active
- Ambalaj
- Bulk
- Fabrika Paket Adedi
- 1800
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