DTC114EUA-TP

Teknik Özellikler

Transistor Application

SWITCHING

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Terminal Pozisyonu

DUAL

Power Dissipationmax Abs

0.2W

Frequency Transition

250MHz

Voltage Collector Emitter Breakdown Max

50V

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

Configuration

SINGLE WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

30 @ 5mA 5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2005

Montaj Tipi

Surface Mount

Temel Parça No

DTC114E

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

3

Tepe Reflow Süresi (maks. sn)

10

Pin Sayısı

3

Yüzey Montaj

YES

JESD-609 Kodu

e3

Currentcollector Ic Max

100mA

Transistor Element Material

SILICON

Kılıf / Paket

SC-70, SOT-323

Kurşunsuz Kodu

yes

Jesd30 Code

R-PDSO-G3

Transistor Type

NPN - Pre-Biased

Polaritychannel Type

NPN

RoHS Durumu

ROHS3 Compliant

Resistor Base R1

10 k Ω

Resistor Emitter Base R2

10 k Ω

Qualification Status

Not Qualified

Terminal Kaplaması

Matte Tin (Sn)

Current Collector Cutoff Max

500nA

Terminal Formu

GULL WING

Transition Frequency

250MHz

Power Max

200mW

ECCN Kodu

EAR99