DTC114ESA-BP

Teknik Özellikler

Resistor Base R1

10 k Ω

RoHS Durumu

ROHS3 Compliant

Resistor Emitter Base R2

10 k Ω

Transistor Type

NPN - Pre-Biased + Diode

Polaritychannel Type

NPN

ECCN Kodu

EAR99

Power Max

300mW

Transition Frequency

250MHz

Terminal Kaplaması

Tin (Sn)

Qualification Status

Not Qualified

Current Collector Cutoff Max

500nA

Yüzey Montaj

NO

Pin Sayısı

3

Jesd30 Code

R-PSIP-T3

Currentcollector Ic Max

100mA

JESD-609 Kodu

e3

Kılıf / Paket

TO-226-3, TO-92-3 Short Body

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

30 @ 5mA 5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Number Of Elements

1

Transistor Application

SWITCHING

Parça Durumu

Last Time Buy

Terminal Pozisyonu

SINGLE

Additional Feature

BUILT-IN BIAS RESISTOR RATIO IS 1

Voltage Collector Emitter Breakdown Max

50V

Frequency Transition

250MHz