BC847PNHE3-TP

Teknik Özellikler

Collectoremitter Saturation Voltage

850 mV

Pd Power Dissipation

200 mW

Voltage Collector Emitter Breakdown Max

45V

Current Collector Cutoff Max

15nA (ICBO)

Montaj Stili

SMD/SMT

Power Max

200mW

Collector Emitter Voltage Vceo Max

45 V

Vce Saturation Max Ib Ic

600mV @ 5mA, 100mA, 650mV @ 5mA, 100mA

Dc Collectorbase Gain Hfe Min

200

Configuration

Dual

Collector Base Voltage Vcbo

50 V

Ürün Durumu

Active

Frequency Transition

100MHz

Emitter Base Voltage Vebo

6 V

Dc Current Gain Hfe Max

450

Temel Ürün No

BC847

Ambalaj

Cut Tape

Maks. Çalışma Sıcaklığı

+ 150 C

Seri

Automotive, AEC-Q101

Transistor Type

NPN, PNP

Currentcollector Ic Max

100mA

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

RoHS

Details

Minimum Operating Temperature

- 55 C

Fabrika Paket Adedi

3000

Transistor Polarity

NPN, PNP

Maximum Dc Collector Current

100 mA

Dc Current Gain Hfe Min Ic Vce

200 @ 2mA, 5V, 220 @ 2mA, 5V

Montaj Tipi

Surface Mount

Gain Bandwidth Product Ft

100 MHz

Ürün Tipi

BJTs - Bipolar Transistors

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Tedarikçi Cihaz Paketi

SOT-363