UZ5112

Teknik Özellikler

Kılıf / Paket

B, Axial

Diode Element Material

SILICON

Configuration

SINGLE

Fabrika Paket Adedi

1

Reverse Test Voltage

91.2 V

JESD-609 Kodu

e0

Montaj Tipi

Through Hole

Operating Temperaturemin

-65 °C

Current Reverse Leakage Vr

5 μA @ 91.2 V

Voltage Tolmax

5%

Yüzey Montaj

NO

Ihs Manufacturer

DIGITRON SEMICONDUCTORS

Part Life Cycle Code

Active

Working Test Current

10 mA

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Number Of Elements

1

Operating Temperaturemax

175 °C

Terminal Pozisyonu

AXIAL

Package Body Material

UNSPECIFIED

Üretici Parça No

UZ5112

Dynamic Impedancemax

170 Ω

Reference Voltagenom

120 V

Package Description

O-XALF-W2

Reflow Temperaturemax S

NOT SPECIFIED

Diode Type

ZENER DIODE

Power Max

5 W

Voltage Temp Coeffmax

120 mV/°C

Power Dissipation Max

5 W

Ürün Durumu

Active

Rohs Code

No

RoHS

N

Voltage Zener Nom Vz

120 V

Risk Rank

5.86

Impedance Max Zzt

170 Ohms

Polarity

UNIDIRECTIONAL

Package Shape

ROUND

Terminal Formu

WIRE

Tolerans

±5%

Ürün Tipi

Zener Diodes

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED