TC8220K6-G

Teknik Özellikler

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

40

Qualification Status

Not Qualified

Vgsth Max Id

2.4V @ 1mA

Montaj Tipi

Surface Mount

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

56pF @ 25V

Transistor Element Material

SILICON

Pin Sayısı

12

Ambalaj

Tape & Reel (TR)

Fet Feature

Standard

Nem Hassasiyeti (MSL)

2 (1 Year)

Rds On Max Id Vgs

6 Ω @ 1A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Terminal Formu

NO LEAD

Fabrika Tedarik Süresi

3 Weeks

Drain To Source Voltage Vdss

200V

Kılıf / Paket

12-VFDFN Exposed Pad

Operating Mode

ENHANCEMENT MODE

Configuration

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Parça Durumu

Active

Yayın Yılı

2013

Drainsource On Resistancemax

7Ohm

JESD-609 Kodu

e4

Fet Type

2 N and 2 P-Channel

ECCN Kodu

EAR99

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Number Of Elements

4

Montaj

Surface Mount

Ds Breakdown Voltagemin

200V

Additional Feature

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

Terminal Sayısı

12

Tepe Reflow Sıcaklığı (°C)

260