TC1550TG-G

Teknik Özellikler

Additional Feature

FAST SWITCHNG

Element Configuration

Dual

Rds On Max Id Vgs

60 Ω @ 50mA, 10V

Yükseklik

1.75mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

N and P-Channel

Genişlik

3.9mm

Number Of Elements

2

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Yayın Yılı

2008

Fet Feature

Standard

Tepe Reflow Sıcaklığı (°C)

260

Vgsth Max Id

4V @ 1mA

Tepe Reflow Süresi (maks. sn)

40

JESD-609 Kodu

e3

Parça Durumu

Active

Transistor Application

AMPLIFIER

Terminal Kaplaması

Matte Tin (Sn) - annealed

Continuous Drain Current Id

16A

Drain Currentmax Abs Id

350A

Uzunluk

4.9mm

Çalışma Sıcaklığı

-55°C~150°C TJ

Turn On Delay Time

10 ns

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

500V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Tape & Reel (TR)

Turn Off Delay Time

15 ns

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

8

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Fabrika Tedarik Süresi

7 Weeks

Qualification Status

Not Qualified

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Weight

84.99187mg

Montaj

Surface Mount

Fall Time Typ

10 ns