MSCSM70AM19T1AG

Teknik Özellikler

Fabrika Paket Adedi

1

Vds Drainsource Breakdown Voltage

700 V

Montaj Tipi

Chassis Mount

Gate Charge Qg Max Vgs

215nC @ 20V

Typical Turnoff Delay Time

50 ns

Tip

Phase Leg SiC MOSFET Power Module

Typical Turnon Delay Time

40 ns

Fet Feature

Silicon Carbide (SiC)

Kılıf / Paket

Module

Maks. Çalışma Sıcaklığı

+ 175 C

Minimum Operating Temperature

- 40 C

Rds On Max Id Vgs

19mOhm @ 40A, 20V

Transistor Polarity

N-Channel

Current Continuous Drain Id25

124A (Tc)

Configuration

Dual

Power Max

365W (Tc)

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Rise Time

40 ns

Technology

SiC

RoHS

Details

Vgs Gatesource Voltage

- 10 V, 23 V

Id Continuous Drain Current

124 A

Pd Power Dissipation

365 W

Paket

Bulk

Fet Type

2 N Channel (Phase Leg)

Montaj Stili

Screw Mounts

Rds On Drainsource Resistance

19 mOhms

Input Capacitance Ciss Max Vds

4500pF @ 700V

Vgsth Max Id

2.4V @ 4mA

Vgs Th Gatesource Threshold Voltage

1.9 V

Ürün Tipi

Discrete Semiconductor Modules

Drain To Source Voltage Vdss

700V

Ürün Durumu

Active