MSCSM70AM10T3AG

Teknik Özellikler

Rds On Max Id Vgs

9.5mOhm @ 80A, 20V

Transistor Polarity

N-Channel

Minimum Operating Temperature

- 40 C

Current Continuous Drain Id25

241A (Tc)

Configuration

Dual

Power Max

690W (Tc)

Typical Turnoff Delay Time

50 ns

Fabrika Paket Adedi

1

Vds Drainsource Breakdown Voltage

700 V

Gate Charge Qg Max Vgs

430nC @ 20V

Montaj Tipi

Chassis Mount

Typical Turnon Delay Time

40 ns

Fet Feature

Silicon Carbide (SiC)

Maks. Çalışma Sıcaklığı

+ 175 C

Kılıf / Paket

Module

Tip

Phase Leg SiC MOSFET Power Module

Input Capacitance Ciss Max Vds

9000pF @ 700V

Vgs Th Gatesource Threshold Voltage

1.9 V

Ürün Tipi

Discrete Semiconductor Modules

Drain To Source Voltage Vdss

700V

Ürün Durumu

Active

Vgsth Max Id

2.4V @ 8mA

Vgs Gatesource Voltage

- 10 V, 23 V

Id Continuous Drain Current

241 A

Pd Power Dissipation

690 W

Paket

Bulk

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Rise Time

40 ns

RoHS

Details

Technology

SiC

Rds On Drainsource Resistance

9.5 mOhms

Fet Type

2 N Channel (Phase Leg)

Montaj Stili

Screw Mounts