MSCSM70AM025T6LIAG

Teknik Özellikler

RoHS

Details

Technology

SiC

Rise Time

56 ns

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Paket

Bulk

Pd Power Dissipation

1.882 kW

Id Continuous Drain Current

689 A

Vgs Gatesource Voltage

- 10 V, 23 V

Montaj Stili

Screw Mounts

Fet Type

2 N Channel (Phase Leg)

Rds On Drainsource Resistance

3.2 mOhms

Input Capacitance Ciss Max Vds

27000pF @ 700V

Vgsth Max Id

2.4V @ 24mA

Ürün Durumu

Active

Ürün Tipi

Discrete Semiconductor Modules

Drain To Source Voltage Vdss

700V

Vgs Th Gatesource Threshold Voltage

1.9 V

Montaj Tipi

Chassis Mount

Gate Charge Qg Max Vgs

1290nC @ 20V

Vds Drainsource Breakdown Voltage

700 V

Fabrika Paket Adedi

1

Typical Turnoff Delay Time

155 ns

Tip

Phase Leg SiC MOSFET Power

Maks. Çalışma Sıcaklığı

+ 175 C

Kılıf / Paket

Module

Fet Feature

Silicon Carbide (SiC)

Typical Turnon Delay Time

66 ns

Minimum Operating Temperature

- 40 C

Transistor Polarity

N-Channel

Rds On Max Id Vgs

3.2mOhm @ 240A, 20V

Power Max

1.882kW (Tc)

Configuration

Dual

Current Continuous Drain Id25

689A (Tc)