MSCSM170TAM23CTPAG

Teknik Özellikler

Vgsth Max Id

3.2V @ 5mA

Ürün Tipi

Discrete Semiconductor Modules

Drain To Source Voltage Vdss

1700V (1.7kV)

Vgs Th Gatesource Threshold Voltage

1.8 V

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

6600pF @ 1000V

Fet Type

6 N-Channel (Phase Leg)

Montaj Stili

SMD/SMT

Rds On Drainsource Resistance

17.5 mOhms

Rise Time

17 ns

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Technology

Si

Id Continuous Drain Current

122 A

Vgs Gatesource Voltage

- 10 V, 23 V

Paket

Bulk

Pd Power Dissipation

588 W

Current Continuous Drain Id25

122A (Tc)

Power Max

588W (Tc)

Minimum Operating Temperature

- 40 C

Rds On Max Id Vgs

22.5mOhm @ 60A, 20V

Temel Ürün No

MSCSM170

Fet Feature

Silicon Carbide (SiC)

Typical Turnon Delay Time

24 ns

Maks. Çalışma Sıcaklığı

+ 175 C

Vf Forward Voltage

1.5 V

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Montaj Tipi

Chassis Mount

Gate Charge Qg Max Vgs

356nC @ 20V

Vds Drainsource Breakdown Voltage

1.7 kV

Typical Turnoff Delay Time

35 ns