MSCSM120TAM31T3AG

Teknik Özellikler

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 175 C

Vgs Gatesource Voltage

- 10 V, 23 V

Power Max

395W (Tc)

Technology

SiC

Fet Type

6 N-Channel (3-Phase Bridge)

Configuration

Three Phase Bridge

Typical Turnon Delay Time

30 ns

Gate Charge Qg Max Vgs

232nC @ 20V

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Pd Power Dissipation

395 W

Vds Drainsource Breakdown Voltage

1200 V

Drain To Source Voltage Vdss

1200V (1.2kV)

Rise Time

30 ns

RoHS

Details

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

3020pF @ 1000V

Tip

MOSFET Power Module

Current Continuous Drain Id25

89A (Tc)

Vgs Th Gatesource Threshold Voltage

1.8 V

Rds On Max Id Vgs

31mOhm @ 40A, 20V

Fet Feature

Silicon Carbide (SiC)

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

31 mOhms

Typical Turnoff Delay Time

50 ns

Id Continuous Drain Current

89 A

Minimum Operating Temperature

- 40 C

Montaj Stili

Screw Mounts

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 3mA

Transistor Polarity

N-Channel