MSCSM120HM31T3AG

Teknik Özellikler

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Typical Turnoff Delay Time

50 ns

Rds On Drainsource Resistance

31 mOhms

Montaj Tipi

Chassis Mount

Input Capacitance Ciss Max Vds

3020pF @ 1000V

Ürün Durumu

Active

RoHS

Details

Fet Feature

Silicon Carbide (SiC)

Rds On Max Id Vgs

31mOhm @ 40A, 20V

Vgs Th Gatesource Threshold Voltage

1.8 V

Tip

Full Bridge SiC MOSFET Power Module

Current Continuous Drain Id25

89A (Tc)

Montaj Stili

Screw Mounts

Transistor Polarity

N-Channel

Vgsth Max Id

2.8V @ 3mA

Ürün Tipi

Discrete Semiconductor Modules

Minimum Operating Temperature

- 40 C

Id Continuous Drain Current

89 A

Fet Type

4 N-Channel (Full Bridge)

Vgs Gatesource Voltage

- 10 V, 23 V

Maks. Çalışma Sıcaklığı

+ 175 C

Paket

Bulk

Technology

SiC

Power Max

395W (Tc)

Vds Drainsource Breakdown Voltage

1200 V

Pd Power Dissipation

395 W

Rise Time

30 ns

Drain To Source Voltage Vdss

1200V (1.2kV)

Gate Charge Qg Max Vgs

232nC @ 20V

Typical Turnon Delay Time

30 ns

Configuration

Full Bridge

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)