MSCSM120HM16TBL3NG

Teknik Özellikler

Fet Type

6 N-Channel (Phase Leg)

Power Max

560W

Technology

SiC

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 175 C

Vgs Gatesource Voltage

- 10 V, 23 V

Drain To Source Voltage Vdss

1200V (1.2kV)

Rise Time

30 ns

Pd Power Dissipation

560 W

Vds Drainsource Breakdown Voltage

1200 V

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Configuration

Dual

Typical Turnon Delay Time

30 ns

Gate Charge Qg Max Vgs

464nC @ 20V

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

16 mOhms

Typical Turnoff Delay Time

50 ns

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Current Continuous Drain Id25

150A

Tip

Dual Phase Leg SiC MOSFET Power Module

Fet Feature

Silicon Carbide (SiC)

Rds On Max Id Vgs

16mOhm @ 80A, 20V

Vgs Th Gatesource Threshold Voltage

1.8 V

RoHS

Details

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

6040pF @ 1000V

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 6mA

Transistor Polarity

N-Channel

Montaj Stili

Screw Mounts

Id Continuous Drain Current

150 A

Minimum Operating Temperature

- 55 C