MSCSM120HM063AG

Teknik Özellikler

Fet Type

4 N-Channel (Full Bridge)

Vgs Gatesource Voltage

- 10 V, 23 V

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 175 C

Power Max

873W (Tc)

Technology

SiC

Vds Drainsource Breakdown Voltage

1200 V

Pd Power Dissipation

873 W

Rise Time

74 ns

Drain To Source Voltage Vdss

1200V (1.2kV)

Gate Charge Qg Max Vgs

928nC @ 20V

Configuration

Full Bridge

Typical Turnon Delay Time

66 ns

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Typical Turnoff Delay Time

166 ns

Rds On Drainsource Resistance

7.8 mOhms

Montaj Tipi

Chassis Mount

Input Capacitance Ciss Max Vds

12000pF @ 1000V

RoHS

Details

Ürün Durumu

Active

Fet Feature

Silicon Carbide (SiC)

Rds On Max Id Vgs

7.8mOhm @ 80A, 20V

Vgs Th Gatesource Threshold Voltage

1.8 V

Current Continuous Drain Id25

333A (Tc)

Tip

Full Bridge SiC Power Module

Montaj Stili

Screw Mounts

Transistor Polarity

N-Channel

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 12mA

Id Continuous Drain Current

333 A

Minimum Operating Temperature

- 40 C