MSCSM120DUM31TBL1NG

Teknik Özellikler

Fet Type

2 N-Channel (Dual) Common Source

Power Max

310W

Technology

SiC

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 175 C

Vgs Gatesource Voltage

- 10 V, 23 V

Drain To Source Voltage Vdss

1200V (1.2kV)

Rise Time

30 ns

Pd Power Dissipation

310 W

Vds Drainsource Breakdown Voltage

1200 V

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Configuration

Dual Common Source

Typical Turnon Delay Time

30 ns

Gate Charge Qg Max Vgs

232nC @ 20V

Rds On Drainsource Resistance

31 mOhms

Montaj Tipi

Chassis Mount

Typical Turnoff Delay Time

50 ns

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Current Continuous Drain Id25

79A

Tip

MOSFET Power Module

Vgs Th Gatesource Threshold Voltage

1.8 V

Rds On Max Id Vgs

31mOhm @ 40A, 20V

Fet Feature

Silicon Carbide (SiC)

RoHS

Details

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

3020pF @ 1000V

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 3mA

Transistor Polarity

N-Channel

Montaj Stili

Screw Mounts

Id Continuous Drain Current

79 A

Minimum Operating Temperature

- 55 C