MSCSM120DHM31CTBL2NG

Teknik Özellikler

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

3020pF @ 1000V

Current Continuous Drain Id25

79A

Tip

Asymmetrical Bridge SiC MOSFET Power Module

Fet Feature

Silicon Carbide (SiC)

Rds On Max Id Vgs

31mOhm @ 40A, 20V

Vf Forward Voltage

1.5 V at 30 A

Vgs Th Gatesource Threshold Voltage

1.8 V

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

31 mOhms

Typical Turnoff Delay Time

50 ns

Minimum Operating Temperature

- 55 C

Id Continuous Drain Current

79 A

Montaj Stili

Screw Mounts

Vr Reverse Voltage

1200 V

Vgsth Max Id

2.8V @ 1mA

Ürün Tipi

Discrete Semiconductor Modules

Transistor Polarity

N-Channel

Maks. Çalışma Sıcaklığı

+ 175 C

Paket

Bulk

Vgs Gatesource Voltage

- 10 V, + 25 V

Technology

SiC

Power Max

310W

Fet Type

2 N-Channel (Dual) Asymmetrical

Typical Turnon Delay Time

30 ns

Configuration

Asymmetrical Bridge

Temel Ürün No

MSCSM120

Gate Charge Qg Max Vgs

232nC @ 20V

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Pd Power Dissipation

310 W

Vds Drainsource Breakdown Voltage

1.2 kV

Drain To Source Voltage Vdss

1200V

Rise Time

30 ns