MSCSM120DDUM16TBL3NG

Teknik Özellikler

Typical Turnon Delay Time

30 ns

Configuration

Dual Common Source

Gate Charge Qg Max Vgs

464nC @ 20V

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Pd Power Dissipation

560 W

Vds Drainsource Breakdown Voltage

1200 V

Drain To Source Voltage Vdss

1200V (1.2kV)

Rise Time

30 ns

Maks. Çalışma Sıcaklığı

+ 175 C

Paket

Bulk

Vgs Gatesource Voltage

- 10 V, 23 V

Technology

SiC

Power Max

560W

Fet Type

4 N-Channel, Common Source

Minimum Operating Temperature

- 55 C

Id Continuous Drain Current

150 A

Montaj Stili

Screw Mounts

Vgsth Max Id

2.8V @ 6mA

Ürün Tipi

Discrete Semiconductor Modules

Transistor Polarity

N-Channel

Ürün Durumu

Active

RoHS

Details

Input Capacitance Ciss Max Vds

6040pF @ 1000V

Current Continuous Drain Id25

150A

Tip

Dual Common Source SiC MOSFET Power Module

Fet Feature

Silicon Carbide (SiC)

Rds On Max Id Vgs

16mOhm @ 80A, 20V

Vgs Th Gatesource Threshold Voltage

1.8 V

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Rds On Drainsource Resistance

16 mOhms

Montaj Tipi

Chassis Mount

Typical Turnoff Delay Time

50 ns