MSCSM120AM31T1AG

Teknik Özellikler

Power Max

395W (Tc)

Technology

SiC

Vgs Gatesource Voltage

- 10 V, 23 V

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 175 C

Fet Type

2 N Channel (Phase Leg)

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Gate Charge Qg Max Vgs

232nC @ 20V

Configuration

Dual

Typical Turnon Delay Time

30 ns

Rise Time

30 ns

Drain To Source Voltage Vdss

1200V (1.2kV)

Vds Drainsource Breakdown Voltage

1200 V

Pd Power Dissipation

395 W

Vgs Th Gatesource Threshold Voltage

1.8 V

Rds On Max Id Vgs

31mOhm @ 40A, 20V

Fet Feature

Silicon Carbide (SiC)

Current Continuous Drain Id25

89A (Tc)

Tip

Phase Leg SiC MOSFET Power Module

Input Capacitance Ciss Max Vds

3020pF @ 1000V

RoHS

Details

Ürün Durumu

Active

Typical Turnoff Delay Time

50 ns

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

31 mOhms

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Id Continuous Drain Current

89 A

Minimum Operating Temperature

- 40 C

Transistor Polarity

N-Channel

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 3mA

Montaj Stili

Screw Mounts