MSCSM120AM08T3AG

Teknik Özellikler

Rise Time

30 ns

Drain To Source Voltage Vdss

1200V (1.2kV)

Vds Drainsource Breakdown Voltage

1200 V

Pd Power Dissipation

1.409 kW

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Gate Charge Qg Max Vgs

928nC @ 20V

Configuration

Dual

Typical Turnon Delay Time

30 ns

Fet Type

2 N Channel (Phase Leg)

Power Max

1.409kW (Tc)

Technology

SiC

Vgs Gatesource Voltage

- 10 V, 23 V

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 175 C

Transistor Polarity

N-Channel

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 12mA

Montaj Stili

Screw Mounts

Id Continuous Drain Current

337 A

Minimum Operating Temperature

- 40 C

Typical Turnoff Delay Time

50 ns

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

7.8 mOhms

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Fet Feature

Silicon Carbide (SiC)

Rds On Max Id Vgs

7.8mOhm @ 160A, 20V

Vgs Th Gatesource Threshold Voltage

1.8 V

Current Continuous Drain Id25

337A (Tc)

Tip

Phase Leg SiC MOSFET Power Module

Input Capacitance Ciss Max Vds

12100pF @ 1000V

RoHS

Details

Ürün Durumu

Active