MSCSM120AM042T6LIAG

Teknik Özellikler

Technology

SiC

Power Max

2.031kW (Tc)

Maks. Çalışma Sıcaklığı

+ 175 C

Paket

Bulk

Vgs Gatesource Voltage

- 10 V, 23 V

Fet Type

2 N Channel (Phase Leg)

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Typical Turnon Delay Time

56 ns

Configuration

Dual

Gate Charge Qg Max Vgs

1392nC @ 20V

Drain To Source Voltage Vdss

1200V (1.2kV)

Rise Time

55 ns

Pd Power Dissipation

2.031 kW

Vds Drainsource Breakdown Voltage

1200 V

Current Continuous Drain Id25

495A (Tc)

Tip

Phase Leg SiC MOSFET Power Module

Rds On Max Id Vgs

5.2mOhm @ 240A, 20V

Fet Feature

Silicon Carbide (SiC)

Ürün Durumu

Active

RoHS

Details

Input Capacitance Ciss Max Vds

18100pF @ 1000V

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

5.2 mOhms

Typical Turnoff Delay Time

166 ns

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Minimum Operating Temperature

- 40 C

Id Continuous Drain Current

495 A

Vgsth Max Id

2.8V @ 18mA

Ürün Tipi

Discrete Semiconductor Modules

Transistor Polarity

N-Channel

Montaj Stili

Screw Mounts