MSCSM120AM042D3AG

Teknik Özellikler

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 175 C

Vgs Gatesource Voltage

- 10 V, 23 V

Power Max

2.031kW (Tc)

Technology

SiC

Fet Type

2 N Channel (Phase Leg)

Configuration

Dual

Typical Turnon Delay Time

66 ns

Gate Charge Qg Max Vgs

1392nC @ 20V

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Pd Power Dissipation

2.031 kW

Vds Drainsource Breakdown Voltage

1200 V

Drain To Source Voltage Vdss

1200V (1.2kV)

Rise Time

74 ns

RoHS

Details

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

18100pF @ 1000V

Current Continuous Drain Id25

495A (Tc)

Tip

Phase Leg SiC Power Module

Vgs Th Gatesource Threshold Voltage

1.8 V

Rds On Max Id Vgs

5.2mOhm @ 240A, 20V

Fet Feature

Silicon Carbide (SiC)

Kılıf / Paket

Module

Fabrika Paket Adedi

1

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

5.2 mOhms

Typical Turnoff Delay Time

166 ns

Id Continuous Drain Current

495 A

Minimum Operating Temperature

- 40 C

Montaj Stili

Screw Mounts

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 18mA

Transistor Polarity

N-Channel