MSCSM120AM03T6LIAG

Teknik Özellikler

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

3.1 mOhms

Typical Turnoff Delay Time

166 ns

Ürün Durumu

Active

RoHS

Details

Input Capacitance Ciss Max Vds

30200pF @ 1000V

Tip

e Phase Leg SiC MOSFET Power

Current Continuous Drain Id25

805A (Tc)

Vgs Th Gatesource Threshold Voltage

1.8 V

Rds On Max Id Vgs

3.1mOhm @ 400A, 20V

Fet Feature

Silicon Carbide (SiC)

Montaj Stili

Screw Mounts

Vgsth Max Id

2.8V @ 30mA

Ürün Tipi

Discrete Semiconductor Modules

Transistor Polarity

N-Channel

Minimum Operating Temperature

- 40 C

Id Continuous Drain Current

805 A

Fet Type

2 N Channel (Phase Leg)

Maks. Çalışma Sıcaklığı

+ 175 C

Paket

Bulk

Vgs Gatesource Voltage

- 10 V, 23 V

Technology

SiC

Power Max

3.215kW (Tc)

Pd Power Dissipation

3.215 kW

Vds Drainsource Breakdown Voltage

1200 V

Drain To Source Voltage Vdss

1200V (1.2kV)

Rise Time

55 ns

Typical Turnon Delay Time

56 ns

Configuration

Dual

Gate Charge Qg Max Vgs

2320nC @ 20V

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)