MSCSM120AM027D3AG

Teknik Özellikler

Input Capacitance Ciss Max Vds

27000pF @ 1000V

RoHS

Details

Ürün Durumu

Active

Vgs Th Gatesource Threshold Voltage

1.8 V

Rds On Max Id Vgs

3.5mOhm @ 360A, 20V

Fet Feature

Silicon Carbide (SiC)

Tip

Phase Leg

Current Continuous Drain Id25

733A (Tc)

Fabrika Paket Adedi

1

Kılıf / Paket

Module

Typical Turnoff Delay Time

150 ns

Montaj Tipi

Chassis Mount

Rds On Drainsource Resistance

3.5 mOhms

Id Continuous Drain Current

733 A

Minimum Operating Temperature

- 40 C

Montaj Stili

Chassis Mount

Transistor Polarity

N-Channel

Ürün Tipi

Discrete Semiconductor Modules

Vgsth Max Id

2.8V @ 27mA

Vgs Gatesource Voltage

-10 V, 23 V

Paket

Bulk

Maks. Çalışma Sıcaklığı

+ 175 C

Power Max

2.97kW (Tc)

Technology

SiC

Fet Type

2 N Channel (Phase Leg)

Gate Charge Qg Max Vgs

2088nC @ 20V

Configuration

Dual

Typical Turnon Delay Time

74 ns

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Vds Drainsource Breakdown Voltage

1200 V

Pd Power Dissipation

2.97 kW

Rise Time

96 ns

Drain To Source Voltage Vdss

1200V (1.2kV)