Adet bazlı fiyat
- 1+ adet$59.50
- 10+ adet$56.13
- 100+ adet$52.95
- 500+ adet$49.96
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Breakdown Voltagemin
- 111 V
- Current Peak Pulse101000s
- 186A
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Voltage Reverse Standoff Typ
- 100V
- Ipp Peak Pulse Current
- 186 A
- Number Of Elements
- 1
- Case Connection
- CATHODE
- Rep Pk Reverse Voltagemax
- 100 V
- Working Voltage
- 100 V
- Çalışma Sıcaklığı
- -55 to 150 °C
- Diode Type
- TRANS VOLTAGE SUPPRESSOR DIODE
- Power Dissipation Max
- 2.5 W
- Montaj Tipi
- Surface Mount
- Breakdown Voltagenom
- 117 V
- Diode Element Material
- SILICON
- HTS Kodu
- 8541.10.00.50
- Package Description
- PLASTIC PACKAGE-1
- Nonrep Peak Rev Power Dismax
- 30000 W
- Direction Type
- Uni-Directional
- Ürün Durumu
- Active
- Maks. Çalışma Sıcaklığı
- + 150 C
- Reflow Temperaturemax S
- NOT SPECIFIED
- Qualification Status
- Not Qualified
- Ambalaj
- Bulk
- Applications
- General Purpose
- Ihs Manufacturer
- MICROSEMI CORP
- Vf Forward Voltage
- 4 V
- Usage Level
- Military grade
- Breakdown Voltagemax
- 123 V
- Technology
- AVALANCHE
- Yüzey Montaj
- YES
- Test Current
- 5 mA
- Clamping Voltage
- 162 V
- Jesd30 Code
- R-PSSO-G1
- Package Body Material
- PLASTIC/EPOXY
- Risk Rank
- 5.63
- Minimum Operating Temperature
- - 55 C
- Voltage Breakdown Min
- 111V
- Screening Level
- Military
- Üretici Parça No
- MAPLAD30KP100A
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