Adet bazlı fiyat
- 1+ adet$39.90
- 10+ adet$37.64
- 100+ adet$35.51
- 500+ adet$33.50
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Ihs Manufacturer
- MICROSEMI CORP
- Vf Forward Voltage
- 2 V
- Usage Level
- Military grade
- Tepe Reflow Süresi (maks. sn)
- 40
- Yüzey Montaj
- YES
- Breakdown Voltagemax
- 71.2 V
- Technology
- AVALANCHE
- Clamping Voltage
- 93.6 V
- Test Current
- 5 mA
- Package Body Material
- PLASTIC/EPOXY
- Jesd30 Code
- S-PSSO-G1
- Risk Rank
- 5.58
- Peak Pulse Power Dissipation
- 15000 W
- Minimum Operating Temperature
- - 55 C
- Voltage Breakdown Min
- 64.4V
- Üretici Parça No
- MAPLAD15KP58CAE3
- Screening Level
- Military
- Package Shape
- SQUARE
- Configuration
- Single
- Package Style
- SMALL OUTLINE
- Terminal Formu
- GULL WING
- Breakdown Voltagemin
- 64.4 V
- Current Peak Pulse101000s
- 159A
- Terminal Kaplaması
- MATTE TIN
- Voltage Reverse Standoff Typ
- 58V
- Ipp Peak Pulse Current
- 159 A
- Number Of Elements
- 1
- Rep Pk Reverse Voltagemax
- 58 V
- Working Voltage
- 58 V
- Diode Type
- TRANS VOLTAGE SUPPRESSOR DIODE
- Çalışma Sıcaklığı
- -55 to 150 °C
- Montaj Tipi
- Surface Mount
- Power Dissipation Max
- 2.5 W
- Diode Element Material
- SILICON
- Package Description
- S-PSSO-G1
- HTS Kodu
- 8541.10.00.50
- Direction Type
- Bi-Directional
- Nonrep Peak Rev Power Dismax
- 15000 W
- Bidirectional Channels
- 1
- Maks. Çalışma Sıcaklığı
- + 150 C
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